Highly uniform 2" phi Fe-doped InP epitaxial layer grown by N/sub 2/ carrier gas mixed chloride vapor phase epitaxy

Abstract

The growth of high quality Fe-doped InP epitaxial layers by the chloride vapor phase epitaxy (VPE) method using N/sub 2/ as a carrier gas instead of conventional H/sub 2/ in the Fe source region is described. It is shown that Fe doping was achieved by introducing FeCl/sub 2/ to the growth region, bypassing the In source region. Reactor growth conditions have been optimized for a 2" phi wafer by examining the relationship between growth conditions and the distributions of resistivities and photoluminescence (PL) intensities. Excellent resistivity and thickness uniformity have been obtained by changing the distance between the gas mixing position and InP substrate and precisely controlling the growth temperature. About 92% of the area of the 2" phi wafer showed resistivities between 5*10/sup 7/ and 5*10/sup 8/ Omega -cm, and the maximum thickness deviation from the average of 2.7 mu m was within 2%.<>