Development of microfabricated planar slow-wave structures on dielectric substrates for miniaturized millimeter-band traveling-wave tubes

N. Ryskin, Roman A. Torgashov, A. Starodubov, A. Rozhnev, A. Serdobintsev, A. Pavlov, V. Galushka, D. Bessonov, G. Ulisse, V. Krozer
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引用次数: 13

Abstract

We report the results of the design, simulation, fabrication, and cold-test measurements of millimeter-band 2D planar microstrip slow-wave structures (SWSs) on dielectric substrates. Such structures have a high slow-wave factor, which allows for low-voltage operation and reduction in the size and weight of the device. A low-cost and flexible fabrication technology based on magnetron sputtering and subsequent laser ablation has been developed and is reported in the paper. Microstrip meander-line SWS circuits at V-, W-, and D-bands have been fabricated and characterized. The fabrication of ring-bar planar SWSs by the photolithographic method is also discussed. Experimental measurement of S-parameters of the fabricated structures reveals good transmission properties. Return loss (S11) does not exceed −10 dB and attenuation is about 2 dB/cm in the V-band, 10 dB/cm in the W-band, and 8.5 dB/cm in the D-band.
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微型化毫米波段行波管介质基板微加工平面慢波结构的研究
本文报道了介电基片上毫米波段二维平面微带慢波结构(SWSs)的设计、模拟、制造和冷试验测量结果。这种结构具有很高的慢波系数,允许低电压操作并减小设备的尺寸和重量。本文报道了一种基于磁控溅射和后续激光烧蚀的低成本柔性制造技术。制备了V、W、d波段的微带弯曲线SWS电路,并对其进行了表征。本文还讨论了光刻法制备环形棒状平面SWSs的方法。实验结果表明,该结构具有良好的传输性能。回波损耗(S11)不超过−10 dB, v波段衰减约为2db /cm, w波段衰减约为10db /cm, d波段衰减约为8.5 dB/cm。
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