Impact of Circuit Limit and Device Noise on RRAM Based Conditional Generative Adversarial Network

Shengyu Bao, Zongwei Wang, Tianyi Liu, Daqin Chen, Yimao Cai, Ru Huang
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Abstract

In this work, a Conditional Generative Adversarial Network (CGAN) [1] is demonstrated based on the Resistive Random Access Memory (RRAM). During training, the read noise of RRAM is utilized as a random bias source to enrich the diversity of the generator in CGAN. Further, we evaluate the impact of both read noise (RRAM as weight storage cell) and the resolution of the AD/DA circuit on the performance of CGAN through a comprehensive simulation.
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电路极限和器件噪声对RRAM条件生成对抗网络的影响
在这项工作中,基于电阻式随机存取存储器(RRAM)演示了条件生成对抗网络(CGAN)[1]。在训练过程中,利用随机随机存储器的读噪声作为随机偏置源,丰富了CGAN发生器的多样性。此外,我们通过全面的仿真评估了读取噪声(RRAM作为权重存储单元)和AD/DA电路的分辨率对CGAN性能的影响。
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