Development of Thin Film Formation Technique Using Ion Irradiation Effect Control in Sputtering Method

Abstract

We fabricated Ni ˆlms on a Polyimide (PI) ˆlm and an Acrylonitrile-Butadiene-Styrene (ABS) resin substrate using unbalanced magnetron sputtering assisted by inductively coupled plasma. For the PI ˆlm, the eŠect of ion irradiation was controlled by substrate DC bias VS and magnetic ‰ux density toward the substrate BC. For the ABS resin substrate, the eŠect of ion irradiation was controlled by target DC power PT and magnetic ‰ux density toward the substrate BC. For each substrate, we investigated the eŠect of ion irradiation on the Ni ˆlm structures in detail. The eŠect of ion irradiation E was estimated by measured physical quantities with respect to sputtered atom ‰ux, ion ‰ux and ion energy. From xray diŠraction measurement, the crystallite size t(111) increased with the eŠect of ion irradiation. Minimum ˆlm resistivities of 9.0×10-6 and 1.4×10-5 Qcm were measured for BC=3 mT and E=0.24 on the PI ˆlm and BC=5 mT and E=0.98 on the ABS resin substrate, respectively. We conclude that controlling the eŠect of ion irradiation is eŠective for high quality Ni ˆlm formation on the PI ˆlm and the ABS resin substrate.