N. Proust, M. Petitjean, S. Cassette, A. Huber, C. Grattepain, F. Plais, B. Agius, J. Perrin
{"title":"InP/insulator interface properties: a comparison between UVCVD, DECR PECVD and 13.56 MHz PECVD","authors":"N. Proust, M. Petitjean, S. Cassette, A. Huber, C. Grattepain, F. Plais, B. Agius, J. Perrin","doi":"10.1109/ICIPRM.1991.147434","DOIUrl":null,"url":null,"abstract":"SiNH and SiOH have been deposited on InP by ultraviolet chemical vapor deposition (UVCVD), distributed electronic cyclotronic resonance (DECR) plasma-enhanced chemical vapor deposition (PECVD), and pulsed 13.56 MHz PECVD at 250 degrees C. A comparison between deposition techniques is presented in terms of interface composition (XPS), defect creation in InP (ETOCAPS), and secondary ion mass spectrometry (SIMS) profiles on metal-insulator-silicon diodes.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"5 1","pages":"543-546"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147434","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
SiNH and SiOH have been deposited on InP by ultraviolet chemical vapor deposition (UVCVD), distributed electronic cyclotronic resonance (DECR) plasma-enhanced chemical vapor deposition (PECVD), and pulsed 13.56 MHz PECVD at 250 degrees C. A comparison between deposition techniques is presented in terms of interface composition (XPS), defect creation in InP (ETOCAPS), and secondary ion mass spectrometry (SIMS) profiles on metal-insulator-silicon diodes.<>
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