Normally off AlGaN/GaN FinFET devices on Si substrate

R. Soman, S. Raghavan, N. Bhat
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引用次数: 2

Abstract

A FinFET device architecture is effective in realising normally off operation in AlxGa(1-x)N/GaN HEMTs with low on resistance and increased gate control. This paper discuses simulation and experimental study of normally off AlxGa(1-x)N/GaN FinFET devices. Atlas silvaco simulator is used to carry out electrostatic simulations to demonstrate normally off operation in AlxGa(1-x)N/GaN FinFETs, by considering the tri-gate induced depletion effect on 2DEG. FinFET devices are fabricated with the understanding gained from simulation studies. The fin width, height and length of the fabricated device were 80 nm, 70 nm abd 1.5 µm respectively. The fabricated device exhibited a threshold voltage of 2.5 V with a maximum drain current of 260 mA/mm at a gate overdrive voltage of 2.5 V. A maximum field effect mobility of 130 cm2/Vs is achieved for the fabricated FinFET device.
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通常关闭硅衬底上的AlGaN/GaN FinFET器件
FinFET器件架构有效地实现了AlxGa(1-x)N/GaN hemt的正常关断操作,具有低导通电阻和增强的栅极控制。本文讨论了常关断AlxGa(1-x)N/GaN FinFET器件的仿真和实验研究。利用Atlas silvaco模拟器对AlxGa(1-x)N/GaN finfet进行静电模拟,通过考虑三栅极对2DEG的损耗效应来演示其正常关闭操作。FinFET器件的制造是基于对仿真研究的理解。所制器件的翅片宽度为80 nm,高度为70 nm,长度为1.5µm。该器件的阈值电压为2.5 V,栅极超驱动电压为2.5 V时最大漏极电流为260 mA/mm。制造的FinFET器件的最大场效应迁移率达到130 cm2/Vs。
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