A 6-bit 100-MS/s Fully-Digital Time-Based Analog-to-Digital Converter

Hassan Rivandi, F. Shakibaee, M. Saberi
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引用次数: 8

Abstract

In this paper, a 6-bit 100-MS/s fully-digital time-based analog-to-digital converter (T-ADC) is proposed. The proposed structure uses a new bulk-driven structure for the required delay element circuits that not only presents a highly-linear voltage-to-delay characteristic, but also reduces the power consumption of the converter. Moreover, the proposed structure utilizes a new switching technique to reduce the complexity of the circuit. In addition, since the output laches of the converter are removed in the proposed T-ADC, the power consumption and the occupied area of the proposed circuit are reduced compared with the conventional structure. The proposed fully-digital T-ADC has been designed and implemented in a 0.13-μm CMOS process with a supply voltage of 1.2 V. Post-layout simulation results show that the proposed ADC archives an effective number of bits (ENOB) of 5.22 bits at the cost of 380 μW power consumption. The silicon area occupied by the proposed circuit is 200 μmx45 μm that is reduced by 75% compared with the conventional counterpart.
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一个6位100毫秒/秒全数字基于时间的模数转换器
本文提出了一种6位100毫秒/秒全数字时基模数转换器(T-ADC)。所提出的结构采用一种新的体驱动结构,用于所需的延迟元件电路,不仅具有高度线性的电压-延迟特性,而且还降低了转换器的功耗。此外,该结构利用一种新的开关技术来降低电路的复杂性。此外,由于在所提出的T-ADC中消除了转换器的输出滞后,因此与传统结构相比,所提出电路的功耗和占用面积降低了。该全数字T-ADC的设计和实现采用0.13 μm CMOS工艺,电源电压为1.2 V。布局后仿真结果表明,该ADC的有效位(ENOB)为5.22位,功耗为380 μW。该电路的硅面积为200 μmx45 μm,与传统电路相比减少了75%。
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