A. Castro-Carranza, M. Cheralathan, B. Iñíguez, J. Pallarès, C. Valla, F. Poullet, G. Depeyrot, M. Estrada
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引用次数: 4
Abstract
In this work we present the process entailed to implement a model for organic thin-film transistors (OTFTs): from the development of the complete model, to its validation and use in a circuit simulator. For this purpose the current-voltage model (UMEM) and its related charge and capacitance model for OTFTs (UBCM) were applied. The complete model is valid in the sub- and above-threshold regimes, and it is continuous in the transition from linear to saturation conditions. UMEM and UBCCM in Verilog-A are used with the SMASH circuit simulator for the analysis of the DC, small signal and transient behavior of OTFT circuits, and are compared with experimental data showing a good agreement.
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