Luminescent properties of cadmium sulfide nanocrystals grown from gas phase

A.B. Bogoslovska, D. Grynko, E. Bortchagovsky
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引用次数: 1

Abstract

Photoluminescent (PL) properties of undoped nanocrystals of cadmium sulfide were investigated as a function of excitation power intensity. Room-temperature PL spectra of CdS nanocrystals grown from the gas phase revealed two emission bands: with peak positions at 510 nm (near-band-edge emission) and close to 690 nm (deep trap defects). Tunable photoluminescence of CdS nanocrystals with the exchange of the main radiative channel from relaxation through defect levels to direct near-band-edge relaxation with the change of the color was demonstrated. Nonlinear behavior of the intensities of near-band-edge and defect level emission lines as well as the blue shift of the peak of defect level emission are discussed and explained by the finite capacitance of the defect subzone in the forbidden gap. The origin of the red-light emission is due to native defects such as sulfur vacancies or twinning interfaces.
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气相生长硫化镉纳米晶的发光特性
研究了未掺杂的硫化镉纳米晶体的光致发光特性与激发功率强度的关系。从气相生长的CdS纳米晶体的室温PL光谱显示出两个发射带:峰值位置在510 nm(近带边发射)和接近690 nm(深阱缺陷)。证明了CdS纳米晶体的可调谐光致发光,其主要辐射通道随颜色的变化从缺陷能级的弛豫到直接近带边弛豫的交换。讨论了近带边缘和缺陷能级发射线强度的非线性行为以及缺陷能级发射峰的蓝移,并用禁隙中缺陷子区的有限电容解释了缺陷能级发射峰的蓝移。红光发射的来源是由于天然缺陷,如硫空位或孪晶界面。
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