D. Denninghoff, J. Lu, M. Laurent, E. Ahmadi, S. Keller, U. Mishra
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引用次数: 35
Abstract
This paper reports 400-GHz fmax using a tall-stem T-gate on an N-polar GaN/InAIN MIS-HEMT grown by MOCVD. This is the highest reported fmax value to date for an N-polar GaN HEMT and is among the highest values for all GaN HEMTs. GaN-based HEMTs.
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