И.В. Илькив, В.В. Лендяшова, Б.Б. Бородин, В.Г. Талалаев, Т. Шугабаев, Р.Р. Резник, Г. Э. Цырлин
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引用次数: 0
Abstract
Experimental results of studying the InAs islands formation of silicon surface by molecular beam epitaxy are presented. It has been found that, InAs islands with both bimodal and uniform size distributions can be formed depending on the Si surface relief and the presence of nanopits. The possibility of fabricating heterostructures with InAs quantum dots demonstrating photoluminescence in the region of 1.65 μm, was showed.
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