{"title":"High precision characterization in In/sub x/Ga/sub 1-x/As on InP","authors":"J.P. Estrera, W. Duncan, Y. Kao, H. Liu","doi":"10.1109/ICIPRM.1991.147424","DOIUrl":null,"url":null,"abstract":"Results of Fourier transform photoluminescence (FTPL), X-ray diffraction (XRD), micro-Raman spectroscopy, and photoreflectance (PR) nondestructive characterization measurements of In/sub x/Ga/sub 1-x/As grown by molecular beam epitaxy (MBE) on semi-insulating InP:Fe substates are presented. FTPL identified recombination processes at low and room temperature and carrier types of InGaAs films through correlation of 4.2 K and 293 K PL emissions. XRD measurements determine the extent of film relaxation and the composition. The strained nature of the InGaAs films is suggested by the correlation of low temperature PL bandgap energy and XRD composition. GaAs-like LO and TO modes and an InAs-like LO mode are identified by Raman scattering. Room temperature PR and PL bandgap energies show correlation within experimental error.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"74 1","pages":"507-510"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147424","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Results of Fourier transform photoluminescence (FTPL), X-ray diffraction (XRD), micro-Raman spectroscopy, and photoreflectance (PR) nondestructive characterization measurements of In/sub x/Ga/sub 1-x/As grown by molecular beam epitaxy (MBE) on semi-insulating InP:Fe substates are presented. FTPL identified recombination processes at low and room temperature and carrier types of InGaAs films through correlation of 4.2 K and 293 K PL emissions. XRD measurements determine the extent of film relaxation and the composition. The strained nature of the InGaAs films is suggested by the correlation of low temperature PL bandgap energy and XRD composition. GaAs-like LO and TO modes and an InAs-like LO mode are identified by Raman scattering. Room temperature PR and PL bandgap energies show correlation within experimental error.<>
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