Interface-Engineered High-Tc Josephson Junctions

B.H Moeckly , K Char , Y Huang , K.L Merkle
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引用次数: 3

Abstract

We have developed a process for fabricating YBa2Cu3O7 thin-film, ramp-type edge junctions in which no deposited barrier is employed. These devices display excellent RSJ-type current–voltage (IV) characteristics with values of Ic and Rn tunable over a useful range for operation of digital circuits. Initial junction reproducibility and uniformity are very encouraging.

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接口工程高tc Josephson结
我们已经开发了一种制造YBa2Cu3O7薄膜的工艺,斜坡型边缘结中没有沉积屏障。这些器件显示出优异的rsj型电流-电压(I-V)特性,Ic和Rn值可在数字电路工作的有用范围内可调。初始结的再现性和均匀性是非常令人鼓舞的。
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Raw data and analysis pipeline for producing figures in F.W. Carter, et. al., 2016 Review and evaluation of methods for application of epitaxial buffer and superconductor layers1 10 K NbN ADC for IR sensor applications Optically-induced effects in Y–ba–cu–O Josephson junctions Cell-library design methodology for integrated RSFQ-logic
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