Paloma E. S. Pellegrini, S. Nista, D. D. de Lara, M. A. Canesqui, E. Bortolucci, S. Moshkalev
{"title":"Exploiting Thermal Scanning Probe Lithography for the Fabrication of Micro and Nano Electronic Devices","authors":"Paloma E. S. Pellegrini, S. Nista, D. D. de Lara, M. A. Canesqui, E. Bortolucci, S. Moshkalev","doi":"10.1109/OMN/SBFotonIOPC58971.2023.10230965","DOIUrl":null,"url":null,"abstract":"By exploiting alternative fabrication processes, electronic and photonic devices can be shrunken and their performance, enhanced. In this work, we study the fabrication of micro and nano structures through thermal scanning probe lithography. With no vacuum requirements, a structure with a minimum dimension of, approximately, 100nm was successfully built, in 17 minutes. Aiming at high performance electronic applications, the structure was coated with a 30nm gold film, and then electric characterized according to its foil resistivity.","PeriodicalId":31141,"journal":{"name":"Netcom","volume":"8 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2023-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Netcom","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMN/SBFotonIOPC58971.2023.10230965","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
By exploiting alternative fabrication processes, electronic and photonic devices can be shrunken and their performance, enhanced. In this work, we study the fabrication of micro and nano structures through thermal scanning probe lithography. With no vacuum requirements, a structure with a minimum dimension of, approximately, 100nm was successfully built, in 17 minutes. Aiming at high performance electronic applications, the structure was coated with a 30nm gold film, and then electric characterized according to its foil resistivity.