Superconductor/semiconductor step junctions: the basic element for hybrid three terminal devices

S.G Lachenmann , A Förster , I Friedrich , D Uhlisch , Th Schäpers , A Kastalsky , A.A Golubov
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引用次数: 3

Abstract

We present experimental data on superconductor/semiconductor hybrid systems which are based on the two-dimensional electron gas at the surface of p-type InAs. A short distance (≈200 nm) between the Nb contacts is obtained using step geometry. The best junctions show a high product of critical current times normal resistance of about 1 mV at T=4.2 K.

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超导体/半导体阶跃结:混合三端器件的基本元件
本文给出了基于p型InAs表面二维电子气的超导体/半导体混合体系的实验数据。采用阶跃几何方法,获得了Nb触点之间的短距离(≈200 nm)。在T=4.2 K时,最佳结显示出临界电流与正常电阻的高乘积,约为1 mV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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