Model improvements to simulate charging in scanning electron microscope

IF 1.5 2区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Micro/Nanolithography, MEMS, and MOEMS Pub Date : 2019-10-01 DOI:10.1117/1.JMM.18.4.044003
K. Arat, T. Klimpel, C. W. Hagen
{"title":"Model improvements to simulate charging in scanning electron microscope","authors":"K. Arat, T. Klimpel, C. W. Hagen","doi":"10.1117/1.JMM.18.4.044003","DOIUrl":null,"url":null,"abstract":"Abstract. Background: Charging of insulators is a complex phenomenon to simulate since the accuracy of the simulations is very sensitive to the interaction of electrons with matter and electric fields. Aim: In this study, we report model improvements for a previously developed Monte-Carlo simulator to more accurately simulate samples that charge. Approach: The improvements include both modeling of low energy electron scattering by first-principle approaches and charging of insulators by the redistribution of the charge carriers in the material with an electron beam-induced conductivity and a dielectric breakdown model. Results: The first-principle scattering models provide a more realistic charge distribution cloud in the material and a better match between noncharging simulations and experimental results. The improvements on the charging models, which mainly focus on the redistribution of the charge carriers, lead to a smoother distribution of the charges and better experimental agreement of charging simulations. Conclusions: Combined with a more accurate tracing of low energy electrons in the electric field, we managed to reproduce the dynamically changing charging contrast due to an induced positive surface potential.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"96 1","pages":"044003 - 044003"},"PeriodicalIF":1.5000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Micro/Nanolithography, MEMS, and MOEMS","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1117/1.JMM.18.4.044003","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 4

Abstract

Abstract. Background: Charging of insulators is a complex phenomenon to simulate since the accuracy of the simulations is very sensitive to the interaction of electrons with matter and electric fields. Aim: In this study, we report model improvements for a previously developed Monte-Carlo simulator to more accurately simulate samples that charge. Approach: The improvements include both modeling of low energy electron scattering by first-principle approaches and charging of insulators by the redistribution of the charge carriers in the material with an electron beam-induced conductivity and a dielectric breakdown model. Results: The first-principle scattering models provide a more realistic charge distribution cloud in the material and a better match between noncharging simulations and experimental results. The improvements on the charging models, which mainly focus on the redistribution of the charge carriers, lead to a smoother distribution of the charges and better experimental agreement of charging simulations. Conclusions: Combined with a more accurate tracing of low energy electrons in the electric field, we managed to reproduce the dynamically changing charging contrast due to an induced positive surface potential.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
扫描电镜模拟电荷的模型改进
摘要背景:绝缘体的充电是一个复杂的现象,因为模拟的准确性对电子与物质和电场的相互作用非常敏感。目的:在本研究中,我们报告了先前开发的蒙特卡罗模拟器的模型改进,以更准确地模拟带电样品。方法:改进包括用第一性原理方法模拟低能电子散射,用电子束诱导电导率和介电击穿模型重新分配材料中的载流子使绝缘体带电。结果:第一原理散射模型提供了更真实的材料内电荷分布云,非充电模拟与实验结果吻合得更好。对充电模型的改进主要集中在电荷载流子的再分配上,使得电荷的分布更加平滑,充电模拟的实验一致性更好。结论:结合对电场中低能电子的更精确追踪,我们成功地再现了由于诱导的正表面电位而动态变化的充电对比。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
CiteScore
3.40
自引率
30.40%
发文量
0
审稿时长
6-12 weeks
期刊最新文献
Rayleigh or Abbe? Origin and naming of the resolution formula of microlithography JM3 is Gone, Long Live JM3! Direct comparison of line edge roughness measurements by SEM and a metrological tilting-atomic force microscopy for reference metrology Resolution enhancement with source-wavelength optimization according to illumination angle in optical lithography Particle and pattern discriminant freeze-cleaning method
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1