{"title":"Session 11 overview: Nonvolatile memory solutions","authors":"T. Kono, Ki-Tae Park, Leland Chang","doi":"10.1109/ISSCC.2017.7870327","DOIUrl":null,"url":null,"abstract":"Continued proliferation of semiconductors drives the evolution of nonvolatile memory technologies towards higher density, lower power consumption, and lower cost. This year, NAND Flash memories are demonstrated in 3D technologies with up to 64 stacked word-line layers. An embedded split-gate NOR Flash is also shown to dramatically reduce power consumption and meet the requirements of high-temperature sensing applications. Finally, logic anti-fuse one-time-programmable (OTP) memory is scaled down to the 10nm technology node.","PeriodicalId":6511,"journal":{"name":"2016 IEEE International Solid-State Circuits Conference (ISSCC)","volume":"20 1","pages":"194-195"},"PeriodicalIF":0.0000,"publicationDate":"2017-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Solid-State Circuits Conference (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2017.7870327","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Continued proliferation of semiconductors drives the evolution of nonvolatile memory technologies towards higher density, lower power consumption, and lower cost. This year, NAND Flash memories are demonstrated in 3D technologies with up to 64 stacked word-line layers. An embedded split-gate NOR Flash is also shown to dramatically reduce power consumption and meet the requirements of high-temperature sensing applications. Finally, logic anti-fuse one-time-programmable (OTP) memory is scaled down to the 10nm technology node.
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