Study of the effects of barrier and passivation nitride stresses on AlGaN/GaN HEMT performance using TCAD simulation

H. Wong, N. Braga, R. Mickevicius, Jie Liu
{"title":"Study of the effects of barrier and passivation nitride stresses on AlGaN/GaN HEMT performance using TCAD simulation","authors":"H. Wong, N. Braga, R. Mickevicius, Jie Liu","doi":"10.1109/WIPDA.2015.7369266","DOIUrl":null,"url":null,"abstract":"Using TCAD simulation, we studied the stress effect of pseudomorphically grown Al0.25Ga0.75N barrier and passivation nitride with intrinsic stress on the electrical characteristics of AlGaN/GaN HEMT. It is found that barrier stress can reduce the two-dimensional electron gas (2DEG) by as much as 15% and change the current by more than 10%, depending on the deformation potential values. Therefore, it is important to extract accurate conduction band deformation potential from experiment or first principle calculation. It is also found that the stress by passivation nitride will induce substantial piezoelectric (PE) charge under the gate region and can be used to adjust the pinch-off voltage through stress engineering for short gate length device.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"40 1","pages":"24-27"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2015.7369266","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Using TCAD simulation, we studied the stress effect of pseudomorphically grown Al0.25Ga0.75N barrier and passivation nitride with intrinsic stress on the electrical characteristics of AlGaN/GaN HEMT. It is found that barrier stress can reduce the two-dimensional electron gas (2DEG) by as much as 15% and change the current by more than 10%, depending on the deformation potential values. Therefore, it is important to extract accurate conduction band deformation potential from experiment or first principle calculation. It is also found that the stress by passivation nitride will induce substantial piezoelectric (PE) charge under the gate region and can be used to adjust the pinch-off voltage through stress engineering for short gate length device.
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利用TCAD模拟研究势垒和钝化氮化应力对AlGaN/GaN HEMT性能的影响
利用TCAD模拟研究了假晶生长Al0.25Ga0.75N势垒和具有本征应力的钝化氮化物对AlGaN/GaN HEMT电学特性的影响。研究发现,根据变形势值的不同,势垒应力可使二维电子气(2DEG)减少15%,使电流改变10%以上。因此,从实验或第一性原理计算中提取准确的导带变形势具有重要意义。同时发现,钝化氮的应力会在栅极区产生大量的压电电荷,可以通过应力工程来调节短栅极长度器件的关断电压。
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