Jiang Linpeng, Zhuma YiZheng, Lu Lian, Li Quanbo, Huang Jun, Zhang Yu
{"title":"Well CD Control and Vertical Profile BARC Etch Development and Related Theory Research","authors":"Jiang Linpeng, Zhuma YiZheng, Lu Lian, Li Quanbo, Huang Jun, Zhang Yu","doi":"10.1109/CSTIC49141.2020.9282531","DOIUrl":null,"url":null,"abstract":"The BARC as a lower cost structure material is widely used in IC manufacture. For I4nm technology node, it is used to determined ion implantation area. However, the ideal BRAC profile is hard to achieve since its soft material characteristic. This deeply restricts its application. In our study, the idealized vertical BARC profile is obtained by variety of BARC profile learning on ICP etcher, with the physical structure evaluated by SEM. In addition, the analysis of radicals and ions processing on the BARC etching and related profile shaped mechanism is proposed. The result induced PR profile plays very important roles in BARC profile develop.","PeriodicalId":6848,"journal":{"name":"2020 China Semiconductor Technology International Conference (CSTIC)","volume":"15 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC49141.2020.9282531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The BARC as a lower cost structure material is widely used in IC manufacture. For I4nm technology node, it is used to determined ion implantation area. However, the ideal BRAC profile is hard to achieve since its soft material characteristic. This deeply restricts its application. In our study, the idealized vertical BARC profile is obtained by variety of BARC profile learning on ICP etcher, with the physical structure evaluated by SEM. In addition, the analysis of radicals and ions processing on the BARC etching and related profile shaped mechanism is proposed. The result induced PR profile plays very important roles in BARC profile develop.
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