Design and Simulation of Multiple Quantum well based InGaN/GaN Light Emitting Diode for High power applications

G. Saranya, M. SivamangaiN., B. Priya, R. BenazirBegam
{"title":"Design and Simulation of Multiple Quantum well based InGaN/GaN Light Emitting Diode for High power applications","authors":"G. Saranya, M. SivamangaiN., B. Priya, R. BenazirBegam","doi":"10.1109/ICDCS48716.2020.243560","DOIUrl":null,"url":null,"abstract":"The electrical and optical characteristics of InGaN/GaN based light emitting diodes (LEDs) having V-shaped, trapezoidal and U-shaped quantum well is simulated using TCAD Silvaco software. Comparison of different well shape is studied and simulation results shows that the device with V-shaped quantum well has superior performance in terms of Internal Quantum Efficiency of 80% and optical power of 120 mW for a maximum current of 200 mA when compared with U-shaped and trapezoidal well.","PeriodicalId":6300,"journal":{"name":"2012 IEEE 32nd International Conference on Distributed Computing Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 32nd International Conference on Distributed Computing Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCS48716.2020.243560","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The electrical and optical characteristics of InGaN/GaN based light emitting diodes (LEDs) having V-shaped, trapezoidal and U-shaped quantum well is simulated using TCAD Silvaco software. Comparison of different well shape is studied and simulation results shows that the device with V-shaped quantum well has superior performance in terms of Internal Quantum Efficiency of 80% and optical power of 120 mW for a maximum current of 200 mA when compared with U-shaped and trapezoidal well.
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大功率多量子阱InGaN/GaN发光二极管的设计与仿真
利用TCAD Silvaco软件模拟了具有v型、梯形和u型量子阱的InGaN/GaN基发光二极管(led)的电学和光学特性。仿真结果表明,与u形阱和梯形阱相比,v形阱的内量子效率可达80%,最大电流为200 mA时光功率可达120 mW。
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