Atomically precise silicon device fabrication

Abstract

An important driving force behind the microelectronics industry is the ability to pack ever more features onto a silicon chip, by continually miniaturising the individual components. However, after 2015 there is no known technological route to reduce devices below 10 nm. We demonstrate a complete fabrication strategy towards atomic-scale device fabrication in silicon using phosphorus as a dopant in combination with scanning probe lithography and high purity, low temperature crystal growth. A major advantage of this strategy is the ability to investigate the role of dopant placement and atomically controlled growth on electronic device operation.