F. Campabadal, J. M. Rafí, M. B. González, M. Zabala, O. Beldarrain, M. Acero, M. Duch
{"title":"Thin dielectric films grown by atomic layer deposition: Properties and applications","authors":"F. Campabadal, J. M. Rafí, M. B. González, M. Zabala, O. Beldarrain, M. Acero, M. Duch","doi":"10.1109/CDE.2013.6481327","DOIUrl":null,"url":null,"abstract":"Atomic layer deposition of high-k dielectrics is currently identified to be an enabling technology for a variety of applications. An overview of the characteristics of the technique is presented and its limiting factors and opportunities discussed. Particular attention is paid to Al2O3 and HfO2 films deposited on silicon in terms of material and electrical characteristics for their use in MEMS and radiation detectors technologies and the effects of post-deposition annealing processing are discussed.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"22 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2013.6481327","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Atomic layer deposition of high-k dielectrics is currently identified to be an enabling technology for a variety of applications. An overview of the characteristics of the technique is presented and its limiting factors and opportunities discussed. Particular attention is paid to Al2O3 and HfO2 films deposited on silicon in terms of material and electrical characteristics for their use in MEMS and radiation detectors technologies and the effects of post-deposition annealing processing are discussed.
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