Influence of the cationic composition on the optical properties and photostability of AgInS2 and AgInS2/ZnS quantum dots

N. Doskaliuk, Y. Babyuk, O. Tynkevych, A. Sachko, Y. Khalavka
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Abstract

Semiconductor I-III-VI nanocrystals are highly luminescent low toxic materials with direct band gap and tunable emission in visible and near infrared region which can be synthesized in aqueous media via simple procedure making them competitive object in compare with well developed and investigated II-VI quantum dots. However the nature of radiative recombination pathways definition and effect of synthesis conditions on spectral characteristics of the nanocrystals investigation remains an important task. In the present work influence of the cation precursors ratio as well as the heat treatment duration on the composition, optical properties and photostability of AgInS2 and AgInS2/ZnS nanocrystals synthesized in aqueous media have been investigated. Due to the low reactivity of indium salts in aqueous solution coused by formation of a stable complexes with stabilizer or hydroxycomplexes the nearest stoichiometric Ag1,1InSx quantum dots are formed at the initial [In]:[Ag] ratio 7:1. Under high excess of Ag formation of Ag2S/AgInS2 core/shell quantum dots confirming by presence of large 12-15 nm nanocrystals and red shift of the photoluminescence maximum with increasing [In]:[Ag] ratio from 1 to 3 (shell thickness should increase proportionally) is possible. With a further increase of the [In]:[Ag] ratio the absorption edge and the photoluminescence maximum are green shifted indicating increase of the quantum dots band energy. That can be explained by lowering of the valence band ceiling energy and rising of the conduction band bottom energy due to decrease of density of states of Ag 4d orbitals and increase of density of states of In 5s and 5p orbitals involved in the AgInS2 band gap formation. Increase of Indium content leads to significant increase of the photoluminescence intensity of AgInS2 nanocrystals eliminating nonradiative defects such as Agi. It have been shown that the ZnS shell epitaxial grow occurs due to the cation exchange between Zn2+ and In3+ and takes place only at low concentration of Zinc precursor ([Zn]:[Ag] ≤ 4). With further enhancement of the ratio the solid solution of AgInS2-ZnS is forming. To achieve the highest possible photoluminescence intensity and energy the AgInS2-ZnS nanocrystals should be heated at 950C at least for 120 minutes. It have been shown that the nearly stoichiometric Ag1,1InSx nanocrystals posess the highest photostability under UV light irradiation.
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阳离子组成对AgInS2和AgInS2/ZnS量子点光学性质和光稳定性的影响
半导体I-III-VI纳米晶体是一种高发光低毒材料,具有直接带隙,在可见光和近红外区发射可调,可以在水介质中通过简单的程序合成,使其与开发和研究的II-VI量子点相比具有竞争力。然而,辐射复合途径的性质、合成条件对纳米晶体光谱特性的影响研究仍然是一个重要的课题。本文研究了阳离子前驱体配比和热处理时间对AgInS2和AgInS2/ZnS纳米晶体组成、光学性质和光稳定性的影响。由于铟盐在水溶液中与稳定剂或羟基配合物(最接近化学计量的Ag1、1InSx)形成稳定的配合物,反应活性较低,形成初始[in]:[Ag]比7:1的量子点。在Ag过量的情况下,Ag2S/AgInS2核/壳量子点的形成可以通过存在12-15 nm的大纳米晶体和随着[In]:[Ag]比从1增加到3(壳厚度应成比例增加)而达到最大的光致发光红移来证实。随着[In]:[Ag]比值的进一步增大,吸收边和光致发光最大值发生绿移,表明量子点能带能量增加。这可以解释为AgInS2带隙形成过程中,Ag 4d轨道态密度降低,In 5s和5p轨道态密度增加,导致价带顶能降低,导带底能升高。铟含量的增加导致AgInS2纳米晶体的光致发光强度显著提高,消除了Agi等非辐射缺陷。结果表明,ZnS壳外延生长是由Zn2+和In3+之间的阳离子交换引起的,只有在低浓度的锌前驱体([Zn]:[Ag]≤4)下才会发生。随着比例的进一步增大,AgInS2-ZnS形成固溶体。为了获得最高的光致发光强度和能量,AgInS2-ZnS纳米晶体应在950C下加热至少120分钟。结果表明,近化学计量的Ag1,1InSx纳米晶体在紫外光照射下具有最高的光稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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