Lithography-induced wettability changes of silicon

Jiajing Zhu, Chengjuan Yang, Fujun Wang, Yanling Tian, Xianping Liu
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引用次数: 4

Abstract

In recent years, the fabrication of hydrophobic surface has become a research hotspot. In this paper, three different patterns were fabricated successfully on the silicon wafers by lithography technology and the effects of dimension and interval parameters on surface wettability were the highlights in this study. Due to the different structural features, the overall average of linear pattern's contact angles were less than the overall average of grid pattern's contact angles and dot pattern's contact angles. What's more, the dimension parameters played a more important role than the interval parameters on the surface wettability. The smaller dimension of microstructure obviously preferred to have higher contact angle with better surface hydrophobic performance, especially when the size is less than 100μm. When the dimension of microstructure was 60μm, the contact angle were all larger than 90°, and some of them even reached the super-hydrophobic surface (larger than 150°).
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光刻诱导硅的润湿性变化
近年来,疏水表面的制备已成为研究热点。本文采用光刻技术在硅片上成功制备了三种不同的图案,其中尺寸和间隔参数对表面润湿性的影响是本研究的重点。由于结构特征不同,线形图案接触角的总体平均值小于网格图案和点形图案接触角的总体平均值。尺寸参数比间距参数对表面润湿性的影响更大。微观结构尺寸越小,接触角越大,表面疏水性能越好,特别是当微观结构尺寸小于100μm时。当微观结构尺寸为60μm时,接触角均大于90°,有的甚至达到超疏水表面(大于150°)。
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