Cache coherence enabled adaptive refresh for volatile STT-RAM

Jianhua Li, Liang Shi, Qing'an Li, C. Xue, Yiran Chen, Yinlong Xu
{"title":"Cache coherence enabled adaptive refresh for volatile STT-RAM","authors":"Jianhua Li, Liang Shi, Qing'an Li, C. Xue, Yiran Chen, Yinlong Xu","doi":"10.7873/DATE.2013.258","DOIUrl":null,"url":null,"abstract":"Spin-Transfer Torque RAM (STT-RAM) is extensively studied in recent years. Recent work proposed to improve the write performance of STT-RAM through relaxing the retention time of STT-RAM cell, magnetic tunnel junction (MTJ). Unfortunately, frequent refresh operations of volatile STT-RAM could dissipate significantly extra energy. In addition, refresh operations can severely conflict with normal read/write operations and results in degraded cache performance. This paper proposes Cache Coherence Enabled Adaptive Refresh (CCear) to minimize refresh operations for volatile STT-RAM. Through novel modifications to cache coherence protocol, CCear can effectively minimize the number of refresh operations on volatile STT-RAM. Full-system simulation results show that CCear approaches the performance of the ideal refresh policy with negligible overhead.","PeriodicalId":6310,"journal":{"name":"2013 Design, Automation & Test in Europe Conference & Exhibition (DATE)","volume":"1966 1","pages":"1247-1250"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Design, Automation & Test in Europe Conference & Exhibition (DATE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7873/DATE.2013.258","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19

Abstract

Spin-Transfer Torque RAM (STT-RAM) is extensively studied in recent years. Recent work proposed to improve the write performance of STT-RAM through relaxing the retention time of STT-RAM cell, magnetic tunnel junction (MTJ). Unfortunately, frequent refresh operations of volatile STT-RAM could dissipate significantly extra energy. In addition, refresh operations can severely conflict with normal read/write operations and results in degraded cache performance. This paper proposes Cache Coherence Enabled Adaptive Refresh (CCear) to minimize refresh operations for volatile STT-RAM. Through novel modifications to cache coherence protocol, CCear can effectively minimize the number of refresh operations on volatile STT-RAM. Full-system simulation results show that CCear approaches the performance of the ideal refresh policy with negligible overhead.
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缓存一致性支持易失性STT-RAM的自适应刷新
自旋传递扭矩RAM (STT-RAM)近年来得到了广泛的研究。近年来,研究人员提出通过延长STT-RAM单元的磁隧道结(MTJ)的保留时间来提高STT-RAM的写入性能。不幸的是,易失性STT-RAM的频繁刷新操作可能会消耗大量额外的能量。此外,刷新操作可能与正常的读写操作发生严重冲突,导致缓存性能下降。本文提出了缓存一致性自适应刷新(cear)来减少易失性STT-RAM的刷新操作。通过对缓存一致性协议的新颖修改,cear可以有效地减少对易失性STT-RAM的刷新操作次数。全系统仿真结果表明,cclear接近理想刷新策略的性能,开销可以忽略不计。
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