Слабая антилокализация в сильно разупорядоченном двумерном полуметалле в квантовой яме HgTe

Е. Б. Ольшанецкий, З. Д. Квон, Николай Николаевич Михайлов
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Abstract

Weak localization in a highly disordered quantum well CdxHg1−xTe/HgTe/CdxHg1−xTe with a thickness of d = 20 nm is experimentally investigated. An analysis is made of the anomalous positive magnetoresistance (APM) caused by the suppression of the interference correction to the conductivity by a magnetic field on both sides of the charge neutrality point: for a two-dimensional semimetal and for a two-dimensional electronic metal. For the same values of resistivity, the APM peak in a 2D semimetal has a much wider width than in a 2D electron gas. A quantitative comparison of the obtained results with the theory allows, in particular, to conclude that the intensity of carrier transitions between subsystems in the 2D semimetal binary system is maximum near the charge neutrality point, where the concentrations of electrons and holes are close, and decreases as the difference in concentrations increases.
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HgTe量子坑中高度有序的二维半金属中的弱抗原
实验研究了厚度为d = 20 nm的高度无序量子阱CdxHg1−xTe/HgTe/CdxHg1−xTe中的弱局域化。分析了二维半金属和二维电子金属在电荷中性点两侧磁场抑制对电导率的干扰校正所引起的异常正磁阻。对于相同的电阻率值,二维半金属中的APM峰的宽度比二维电子气体中的要宽得多。将得到的结果与理论进行定量比较,可以特别得出这样的结论:二维半金属二元体系中子系统之间的载流子跃迁强度在电荷中性点附近最大,电子和空穴的浓度接近,并且随着浓度差的增加而降低。
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