Hai-Qing Xie, Yun Zeng, Jianping Zeng, Guo-Liang Zhang, Taihong Wang
{"title":"Photo-BJMOSFET Based on SOI Film and Its Analytical Compact Model","authors":"Hai-Qing Xie, Yun Zeng, Jianping Zeng, Guo-Liang Zhang, Taihong Wang","doi":"10.1109/SOPO.2009.5230093","DOIUrl":null,"url":null,"abstract":"A novel photoelectric device-photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film was proposed in this paper. The photo-BJMOSFET operates in the depletion but not inversion region to decrease dark current. Due to two kinds of carriers (electron and hole) in this device, it is more sensitive than the conventional MOS structure under the same operating conditions and structure parameters. Numerical calculation of the analytical model indicates that photo-BJMOSFET has high sensitivity and SNR (Signal to Noise Ratio). In addition, it can eliminate the high dark current of PN junction under CMOS process, and promise compatibility with CMOS process.","PeriodicalId":6416,"journal":{"name":"2009 Symposium on Photonics and Optoelectronics","volume":"13 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Symposium on Photonics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOPO.2009.5230093","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A novel photoelectric device-photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film was proposed in this paper. The photo-BJMOSFET operates in the depletion but not inversion region to decrease dark current. Due to two kinds of carriers (electron and hole) in this device, it is more sensitive than the conventional MOS structure under the same operating conditions and structure parameters. Numerical calculation of the analytical model indicates that photo-BJMOSFET has high sensitivity and SNR (Signal to Noise Ratio). In addition, it can eliminate the high dark current of PN junction under CMOS process, and promise compatibility with CMOS process.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
