Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope

IF 1.5 2区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Micro/Nanolithography, MEMS, and MOEMS Pub Date : 2019-07-01 DOI:10.1117/1.JMM.18.3.034005
Dong Gon Woo, Young Woong Kim, Y. Jang, S. Wi, Jinho Ahn
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Abstract

Abstract. Background: An extreme ultraviolet (EUV) pellicle is necessary to increase the process yield even though the declining throughput is a big concern. However, an EUV metrology/inspection tool for this pellicle has not been commercialized yet. Aim: The goal of this study is to verify the pellicle/mask inspection feasibility of EUV scanning lensless imaging (ESLI) and verify the impact of contaminants on pellicles depending on their size. Approach: Through-pellicle imaging was implemented by using ESLI, which uses a high-order harmonic generation EUV source and ptychography. Optical characteristics of various sizes of Fe-contaminated EUV pellicles were evaluated to verify their impact on wafer images. Results: Large size (∼10  μm) contaminants on the pellicle were found to contribute to the final wafer pattern loss. However, small size (2 to 3  μm) contaminants on the pellicle do not have substantial impact on the wafer image. Conclusions: The defect detection capability of ESLI for pellicle and mask was confirmed. Therefore, ESLI is useful in applications like pellicle qualification and EUV mask inspection metrology.
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极紫外光斑摄影显微镜对极紫外光掩膜的透膜成像
摘要背景:极紫外(EUV)薄膜对于提高工艺收率是必要的,尽管产量下降是一个大问题。然而,用于该薄膜的EUV计量/检测工具尚未商业化。目的:本研究的目的是验证EUV扫描无透镜成像(ESLI)膜膜/掩膜检测的可行性,并验证污染物对膜膜大小的影响。方法:利用高次谐波产生的EUV源和平面成像技术,利用ESLI实现了透膜成像。对不同尺寸的fe污染的EUV薄膜的光学特性进行了评估,以验证其对晶圆图像的影响。结果:发现薄膜上的大尺寸(~ 10 μm)污染物是导致最终晶圆图案损失的原因。然而,薄膜上的小尺寸(2 ~ 3 μm)污染物不会对晶圆图像产生实质性影响。结论:证实了ESLI对膜膜和面罩的缺陷检测能力。因此,ESLI在薄膜鉴定和EUV掩模检测计量等应用中非常有用。
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来源期刊
CiteScore
3.40
自引率
30.40%
发文量
0
审稿时长
6-12 weeks
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