Wan-Yao Wu, Chia-Hsiang Chen, Chia-Hao Hsu, Shih-yuan Wei, Chien-Hsu Chen, Yun-chung Wu, T. Hong, H. Niu, C. Lai
{"title":"The effect of Na ion implantation on the polycrystalline CuIn1−xGaxSe2","authors":"Wan-Yao Wu, Chia-Hsiang Chen, Chia-Hao Hsu, Shih-yuan Wei, Chien-Hsu Chen, Yun-chung Wu, T. Hong, H. Niu, C. Lai","doi":"10.1109/PVSC.2012.6317597","DOIUrl":null,"url":null,"abstract":"In this work, Ion implantation was applied for quantitative and spatial control of Na distribution in CIGS films. Local Na-doped layer near the CIGS surface was observed in secondary ion mass spectroscopy (SIMS) depth-profile. Implantation-induced lattice displacement and recovery processes by rapid thermal annealing were characterized by Raman spectroscopy and grazing incident X-ray diffraction. Post annealing process and annealing during implantation both can reduce implantation-induced displacement well. In the preliminary work, Na-implanted CIGS film lead to an enhancement in electrical properties of device.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"99 1","pages":"000185-000187"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 38th IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2012.6317597","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this work, Ion implantation was applied for quantitative and spatial control of Na distribution in CIGS films. Local Na-doped layer near the CIGS surface was observed in secondary ion mass spectroscopy (SIMS) depth-profile. Implantation-induced lattice displacement and recovery processes by rapid thermal annealing were characterized by Raman spectroscopy and grazing incident X-ray diffraction. Post annealing process and annealing during implantation both can reduce implantation-induced displacement well. In the preliminary work, Na-implanted CIGS film lead to an enhancement in electrical properties of device.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
