Correlating chemical and electronic states from quantitative photoemission electron microscopy of transition-metal dichalcogenide heterostructures

O. Renault, HoKwon Kim, D. Dumcenco, D. Unuchek, N. Chevalier, A. Kis, N. Fairley
{"title":"Correlating chemical and electronic states from quantitative photoemission electron microscopy of transition-metal dichalcogenide heterostructures","authors":"O. Renault, HoKwon Kim, D. Dumcenco, D. Unuchek, N. Chevalier, A. Kis, N. Fairley","doi":"10.1116/6.0001135","DOIUrl":null,"url":null,"abstract":"Vertical heterostructures of MoS2 and WSe2 layers are studied by spectroscopic photoemission electron microscopy as an effective technique for correlating chemical and electronic states at the micrometer scale. Element-specific, surface-sensitive images recorded at high lateral and energy resolution from core-level photoelectrons using different laboratory excitation sources are postprocessed to obtain laterally resolved maps of elemental composition and energy shifts in the Mo3d spectra of a few hundred meV. For monolayer MoS2, the method reveals substrate-dependent charge transfer properties within the narrow energy range of 360 meV, with MoS2 becoming more n-type after transfer onto WSe2. The band structure data from momentum microscopy taken over the same areas confirm the charge transfer from WSe2 to MoS2 by the shift of the K-bands away from the Fermi level and illustrates the layer-specific contributions to the electronic band structure of the heterostructure. From work function mapping, the reconstructed energy-level diagram reveals a type II heterostructure but with a very small conduction-band offset.","PeriodicalId":17571,"journal":{"name":"Journal of Vacuum Science and Technology","volume":"22 1","pages":"053210"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0001135","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Vertical heterostructures of MoS2 and WSe2 layers are studied by spectroscopic photoemission electron microscopy as an effective technique for correlating chemical and electronic states at the micrometer scale. Element-specific, surface-sensitive images recorded at high lateral and energy resolution from core-level photoelectrons using different laboratory excitation sources are postprocessed to obtain laterally resolved maps of elemental composition and energy shifts in the Mo3d spectra of a few hundred meV. For monolayer MoS2, the method reveals substrate-dependent charge transfer properties within the narrow energy range of 360 meV, with MoS2 becoming more n-type after transfer onto WSe2. The band structure data from momentum microscopy taken over the same areas confirm the charge transfer from WSe2 to MoS2 by the shift of the K-bands away from the Fermi level and illustrates the layer-specific contributions to the electronic band structure of the heterostructure. From work function mapping, the reconstructed energy-level diagram reveals a type II heterostructure but with a very small conduction-band offset.
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从定量光电子显微镜分析过渡金属二硫化物异质结构的化学和电子态
利用光电子显微镜研究了MoS2和WSe2层的垂直异质结构,这是一种在微米尺度上关联化学和电子状态的有效技术。利用不同的实验室激发源,以高横向和能量分辨率从核心级光电子记录的元素特异性表面敏感图像进行后处理,以获得数百meV的Mo3d光谱中元素组成和能量位移的横向分辨图。对于单层MoS2,该方法揭示了在360 meV的窄能量范围内与衬底相关的电荷转移性质,MoS2转移到WSe2后更倾向于n型。在相同区域进行的动量显微镜的能带结构数据证实了电荷从WSe2转移到MoS2是由于k带偏离费米能级,并说明了层对异质结构电子能带结构的特定贡献。从功函数映射来看,重构的能级图显示为II型异质结构,但导带偏移很小。
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