Formation of ohmic contacts to cadmium sulphide

P. Stewart, R. Wilson
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引用次数: 3

Abstract

A relationship has been observed between the density of triangular etch pits on (1010) faces of some single-crystal samples of CdS and the relative difficulty encountered in making indium-diffused ohmic contacts to these specimens. Various workers have observed a relationship between etch-pit and dislocation densities in CdS. The results suggest that the important diffusion mechanism in making contacts is by diffusion into dislocations.
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与硫化镉形成欧姆接触
在一些cd单晶样品的(1010)表面上三角形蚀刻坑的密度与在这些样品上制造铟扩散欧姆接触所遇到的相对困难之间已经观察到一种关系。许多工作者已经观察到cd中蚀刻坑和位错密度之间的关系。结果表明,接触的主要扩散机制是通过扩散形成位错。
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