A novel charge based SPICE model for nonlinear device capacitances

Abstract

Modeling of parasitic semiconductor device capacitances has always been a difficult task due to their nonlinearities. In this paper, we present a novel charge based model which provides simplification and ease of the modeling process. Further-more, convergence errors are reduced and the simulation speed is enhanced by up to a factor of two compared to state of the art models. This is especially important for novel SiC and GaN devices which allow for increased switching frequencies and thus a higher number of switching cycles per time period. Moreover, the presented modeling approach can easily be automated which is a significant advantage compared to state of the art models consisting of arbitrary mathematical equations.