S. Preis, D. Kienemund, N. Wolff, H. Maune, R. Jakoby, W. Heinrich, O. Bengtsson
{"title":"Thick-film MIM BST varactors for GaN power amplifiers with discrete dynamic load modulation","authors":"S. Preis, D. Kienemund, N. Wolff, H. Maune, R. Jakoby, W. Heinrich, O. Bengtsson","doi":"10.1109/MWSYM.2017.8059097","DOIUrl":null,"url":null,"abstract":"Due to their extremely low static current consumption, varactors based on BST are perfect devices for realization of tunable and re-configurable components. This work presents fully screen-printed MIM thick-film BST varactors that are used to tune the load impedance for GaN HEMTs. The varactor tuning voltage is supplied in discrete steps using a high-speed GaN-based modulator. Modulated measurements with LTE and WCDMA signals show, for the first time, the functionality of a BST-based load modulation system and the power consumption of the load-modulation in dynamic operation. Using discrete dynamic load modulation, an average PAE of 27.3% was measured for the LTE signal with an ACLR below −45 dB.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"2012 1","pages":"281-284"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2017.8059097","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Due to their extremely low static current consumption, varactors based on BST are perfect devices for realization of tunable and re-configurable components. This work presents fully screen-printed MIM thick-film BST varactors that are used to tune the load impedance for GaN HEMTs. The varactor tuning voltage is supplied in discrete steps using a high-speed GaN-based modulator. Modulated measurements with LTE and WCDMA signals show, for the first time, the functionality of a BST-based load modulation system and the power consumption of the load-modulation in dynamic operation. Using discrete dynamic load modulation, an average PAE of 27.3% was measured for the LTE signal with an ACLR below −45 dB.