Thick-film MIM BST varactors for GaN power amplifiers with discrete dynamic load modulation

S. Preis, D. Kienemund, N. Wolff, H. Maune, R. Jakoby, W. Heinrich, O. Bengtsson
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引用次数: 4

Abstract

Due to their extremely low static current consumption, varactors based on BST are perfect devices for realization of tunable and re-configurable components. This work presents fully screen-printed MIM thick-film BST varactors that are used to tune the load impedance for GaN HEMTs. The varactor tuning voltage is supplied in discrete steps using a high-speed GaN-based modulator. Modulated measurements with LTE and WCDMA signals show, for the first time, the functionality of a BST-based load modulation system and the power consumption of the load-modulation in dynamic operation. Using discrete dynamic load modulation, an average PAE of 27.3% was measured for the LTE signal with an ACLR below −45 dB.
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离散动态负载调制GaN功率放大器的厚膜MIM BST变容
由于其极低的静态电流消耗,基于BST的变容管是实现可调谐和可重构组件的完美器件。这项工作提出了完全丝网印刷的MIM厚膜BST变容管,用于调整GaN hemt的负载阻抗。变容管调谐电压采用高速氮化镓调制器,以离散步骤提供。对LTE和WCDMA信号的调制测量首次显示了基于bst的负载调制系统的功能和负载调制在动态运行中的功耗。使用离散动态负载调制,在ACLR低于- 45 dB的LTE信号中,平均PAE为27.3%。
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