Growth of single crystal WS2 thin films via atmospheric pressure CVD

Abstract

Single crystal WS2 film has been paid much more attentions due to its special optical-electrical performance and potential application in the field of biosensor and photodetector in recent years. In this work, we focused on the growth of single crystal WS2 and explored the effect of the position of sulfur and carrier gas flow rate on the nucleation density systematically. The results indicated that the nucleation density of WS2 varies obviously correspond to sulfur position and gas flow, the reasons of the variety on the nucleation density was investigated. Meanwhile, granular and massive WS2 was characterized by an optical microscope, atomic force microscope and Raman spectra.