Temperature-Dependence of Aluminum Implanted 4H-SiC After High-Temperature Annealing

Abstract

This study explores the effect of implantation temperature on defect information at a total implantation dose of 1×1014 cm−2. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) were used to investigate defect formation of 4H-SiC in which a medium dose of aluminum ions had been implanted at different temperatures. In the XRD spectrum, a subtle difference was observed among samples, while the TEM images show that defect formation after post-implantation annealing was highly similar on the three samples. On the other hand, secondary ion mass spectroscopy (SIMS) indicates that the implanted temperature has no significant effect on the ions' concentration distribution. The study concludes that room temperature can be used instead of high temperature in the implantation process at such a medium dose.