Bo He, Q. Zhong, Jing Xu, Lei Zhao, Feng Li, Cheng Shen, N. Zhang, ZhengShan Yu, Yanting Yin
{"title":"Study of a Novel ITO/AZO/SiO2/p-Si SIS Heterojunction","authors":"Bo He, Q. Zhong, Jing Xu, Lei Zhao, Feng Li, Cheng Shen, N. Zhang, ZhengShan Yu, Yanting Yin","doi":"10.1109/SOPO.2009.5230104","DOIUrl":null,"url":null,"abstract":"(1. SHU-Solar E PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, China) (2. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WuHan University of technology, HuBei WuHan 430070,China) Abstract — ITO/AZO double films were deposited by RF sputtering on p-Si(100) substrate to fabricate ITO/AZO/SiO2/p-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized by UV-VIS spectrophotometer, four point probe and Hall effect measurement, respectively. The results show that ITO/AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical good rectifying behavior and great photoelectric effect. Keywords— ITO; Al-doped ZnO (AZO); Sputtering; SIS heterojunction;, current-voltage(I-V) characteristics","PeriodicalId":6416,"journal":{"name":"2009 Symposium on Photonics and Optoelectronics","volume":"2009 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Symposium on Photonics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOPO.2009.5230104","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
(1. SHU-Solar E PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, China) (2. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WuHan University of technology, HuBei WuHan 430070,China) Abstract — ITO/AZO double films were deposited by RF sputtering on p-Si(100) substrate to fabricate ITO/AZO/SiO2/p-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized by UV-VIS spectrophotometer, four point probe and Hall effect measurement, respectively. The results show that ITO/AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical good rectifying behavior and great photoelectric effect. Keywords— ITO; Al-doped ZnO (AZO); Sputtering; SIS heterojunction;, current-voltage(I-V) characteristics
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