Evolution, challenge, and outlook of TSV, 3D IC integration and 3d silicon integration

J. Lau
{"title":"Evolution, challenge, and outlook of TSV, 3D IC integration and 3d silicon integration","authors":"J. Lau","doi":"10.1109/ISAPM.2011.6105753","DOIUrl":null,"url":null,"abstract":"3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general the TSV (through-silicon via) separates 3D IC packaging from 3D IC/Si integrations since the latter two use TSV but 3D IC packaging does not. TSV (with a new concept that every chip or interposer could have two surfaces with circuits) is the heart of 3D IC/Si integrations and is the focus of this investigation. The origin of 3D integration is presented. Also, the evolution, challenges, and outlook of 3D IC/Si integrations are discussed as well as their road maps are presented. Finally, a few generic, low-cost, and thermal-enhanced 3D IC integration system-in-packages (SiPs) with various passive TSV interposers are proposed.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":"23 1","pages":"462-488"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"155","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Symposium on Advanced Packaging Materials (APM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAPM.2011.6105753","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 155

Abstract

3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general the TSV (through-silicon via) separates 3D IC packaging from 3D IC/Si integrations since the latter two use TSV but 3D IC packaging does not. TSV (with a new concept that every chip or interposer could have two surfaces with circuits) is the heart of 3D IC/Si integrations and is the focus of this investigation. The origin of 3D integration is presented. Also, the evolution, challenges, and outlook of 3D IC/Si integrations are discussed as well as their road maps are presented. Finally, a few generic, low-cost, and thermal-enhanced 3D IC integration system-in-packages (SiPs) with various passive TSV interposers are proposed.
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TSV、3D集成电路和3D硅集成的发展、挑战和展望
3D集成包括3D IC封装、3D IC集成和3D Si集成。它们是不同的,一般来说,TSV(通硅通孔)将3D IC封装与3D IC/Si集成分开,因为后两者使用TSV,但3D IC封装没有。TSV(每个芯片或中间层都可以有两个带电路的表面的新概念)是3D IC/Si集成的核心,也是本研究的重点。介绍了三维集成的起源。此外,还讨论了3D IC/Si集成的发展、挑战和前景,并给出了它们的发展路线图。最后,提出了几种通用的、低成本的、热增强的3D集成电路系统级封装(sip),采用各种无源TSV中间体。
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