{"title":"Recent advances in dry etching processes for InP-based materials","authors":"U. Niggebrugge","doi":"10.1109/ICIPRM.1991.147346","DOIUrl":null,"url":null,"abstract":"The advances towards high-quality dry etching techniques for InP-based materials are reviewed, including recent results on process induced damage. Methods of in situ etch depth control are discussed, and examples of devices advantageously fabricated by dry etching techniques are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"17 1","pages":"246-251"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147346","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The advances towards high-quality dry etching techniques for InP-based materials are reviewed, including recent results on process induced damage. Methods of in situ etch depth control are discussed, and examples of devices advantageously fabricated by dry etching techniques are presented.<>
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