Efficiency optimization for a power factor correction (PFC) rectifier with gallium nitride transistor

S. Bolte, N. Frohleke, J. Bocker
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引用次数: 1

Abstract

In this contribution, a 1 kW one phase power factor correction (PFC) rectifier with a Gallium Nitride (GaN) transistor is optimized considering switching frequency in regard to the losses of the PFC inductor. A driver circuit with negative voltage at switch-off supplied from a unipolar voltage supply is proposed. A model of the PFC rectifier including conduction and switching losses of semiconductors, copper and core losses of inductor is developed and utilized to identify the best design by numeric optimization of switching frequency, number of turns and length of air gap. Simulation results show an efficiency of about 98.6% at full load with 230 V mains voltage.
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氮化镓晶体管功率因数校正整流器的效率优化
在这项贡献中,考虑到开关频率与PFC电感的损耗,对带有氮化镓(GaN)晶体管的1kw单相功率因数校正(PFC)整流器进行了优化。提出了一种由单极电压电源提供关断负电压的驱动电路。建立了包含半导体导通和开关损耗、铜损耗和电感铁芯损耗的PFC整流器模型,并利用该模型对开关频率、匝数和气隙长度进行了数值优化,确定了最佳设计方案。仿真结果表明,在230 V市电电压下,该方法的效率可达98.6%左右。
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