M. Lisiansky, Y. Roizin, M. Gutman, S. Keysar, A. Ben-Guigui, M. Berreby
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引用次数: 0
Abstract
In-process ultraviolet (UV) stimulated charging of ONO (oxide-nitride-oxide) stack is observed in fieldless microFlash (NROM) memory arrays. This problem is solved by introducing a UV blocking layer into the D1 dielectric. In this paper we discuss an alternative approach to the solution of charging problem. A micropartitioning technique is described that allows to screen out the operations responsible for ONO charging and corresponding equipment.
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