M. I. Niass, M. Sharif, Yi-fu Wang, Fang Wang, Yuhuai Liu
{"title":"Deep Ultraviolet Edge Emitting Laser Diode Using Novel Boron Gallium Nitride over Sapphire Substrate: Simulation Study","authors":"M. I. Niass, M. Sharif, Yi-fu Wang, Fang Wang, Yuhuai Liu","doi":"10.1109/SSLChinaIFWS54608.2021.9675276","DOIUrl":null,"url":null,"abstract":"Exploiting the advanced LASTIP-Crosslight simulator, theoretical analysis for a novel edge emitting laser diode (EELD) composed of trinary Boron Gallium Nitride BxGa1-xN is performed in this work to enhance the P-type conductivity. The simulation results obtained with a prototypical proposal expect lasing at a target UVC wavelength of 270 nm. Furthermore, the minimum direct-resistance can be obtained under the N-electrode area width of 0.5 µm or the P-electrode area width of 3 µm. This result is attributed to the linear and nonlinear relationships between the direct-resistance and the width sizes of N-electrode and P-electrode.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"22 1","pages":"86-90"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675276","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Exploiting the advanced LASTIP-Crosslight simulator, theoretical analysis for a novel edge emitting laser diode (EELD) composed of trinary Boron Gallium Nitride BxGa1-xN is performed in this work to enhance the P-type conductivity. The simulation results obtained with a prototypical proposal expect lasing at a target UVC wavelength of 270 nm. Furthermore, the minimum direct-resistance can be obtained under the N-electrode area width of 0.5 µm or the P-electrode area width of 3 µm. This result is attributed to the linear and nonlinear relationships between the direct-resistance and the width sizes of N-electrode and P-electrode.
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