Flicker noise characterization and analytical modeling of homo and hetero-junction III–V tunnel FETs

Abstract

Temperature dependent transfer characteristics measurements confirm that the current in heteroJn TFET is limited by band-to-band tunneling at Vds=500mV at low temperature. HeteroJn TFETs exhibit lower noise compared to homoJn TFET where the current transport is dominated by band-to-band tunneling alone. However, at 300K, heteroJn TFETs have comparable noise performance due to the strong presence of trap assisted tunneling (Nit~1013 cm-2). A carrier number fluctuation based model is developed, for the first time, to explain the flicker noise advantage of heteroJn TFETs over homoJn TFETs. HeteroJn TFETs not only provide higher drive currents but also exhibit lower flicker noise levels and hence make them suitable candidate for future low Vcc digital and analog applications.