Lei Ge, Yan Peng, Xiwei Wang, Dufu Wang, Mingsheng Xu, Xiangang Xu
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引用次数: 1
Abstract
In this paper, a microwave plasma chemical vapor deposition (MPCVD) method is used to homoepitaxially epitaxial diamond film on a high-pressure high temperature(HPHT) diamond substrate, and a metal-semiconductor field effect transistor (MESFET) solar-blind detector is prepared to measure the photoelectric response performance of the detector. The results show that the detector made of diamond has a good photoelectric response to deep ultraviolet light.
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