F. Ducroquet, D. Pogány, S. Ababou, G. Guillot, S. Krawczyk, K. Schohe, C. Klingelhofer
{"title":"Electrical characterization of lattice-mismatched In/sub x/Ga/sub 1-x/As photodiode arrays for detection to 1.7 mu m","authors":"F. Ducroquet, D. Pogány, S. Ababou, G. Guillot, S. Krawczyk, K. Schohe, C. Klingelhofer","doi":"10.1109/ICIPRM.1991.147314","DOIUrl":null,"url":null,"abstract":"Lattice mismatched In/sub x/Ga/sub 1-x/As photodiode arrays used for the detection of up to 1.7 mu m in space applications are discussed. The abnormally high reverse current observed on some diodes is interpreted by the electric field assisted generation process. The role of misfit dislocations in the process seems to be important, as established by the correlation between local lowering of photoluminescence signal and the high reverse current. The detection of one deep level on these photodiodes by admittance spectroscopy measurements is described.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"1 1","pages":"142-145"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Lattice mismatched In/sub x/Ga/sub 1-x/As photodiode arrays used for the detection of up to 1.7 mu m in space applications are discussed. The abnormally high reverse current observed on some diodes is interpreted by the electric field assisted generation process. The role of misfit dislocations in the process seems to be important, as established by the correlation between local lowering of photoluminescence signal and the high reverse current. The detection of one deep level on these photodiodes by admittance spectroscopy measurements is described.<>
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