A 95fJ/b current-mode transceiver for 10mm on-chip interconnect

Seon-Kyoo Lee, Seung-Hun Lee, D. Sylvester, D. Blaauw, J. Sim
{"title":"A 95fJ/b current-mode transceiver for 10mm on-chip interconnect","authors":"Seon-Kyoo Lee, Seung-Hun Lee, D. Sylvester, D. Blaauw, J. Sim","doi":"10.1109/ISSCC.2013.6487727","DOIUrl":null,"url":null,"abstract":"Data communication between local system blocks through on-chip global interconnects presents significant design challenges in scaled VLSI systems. The goal of this research is to reduce the energy consumed per bit transmitted, while achieving Gb/s data rates over interconnect lengths up to 10mm. Voltage-mode signaling with capacitive boosting [1-2] has been proposed for low-power on-chip interconnects. To increase the data rate over RC-limited interconnect, aggressive equalization schemes should be used in receivers [1-3] and transmitters [1-2] at the cost of significant power consumption. As an alternative to voltage-mode signaling, current-mode signaling has been considered. It was originally used for fast bitline sensing in memory [4-5] to take inherent advantage of a reduced RC time constant. However, prior work on current-mode transceivers for on-chip interconnect shows worse energy efficiency than their voltage-mode counterparts due to large static power dissipation by current-sensing circuit [6-7]. This paper presents a 95fJ/b current-mode transceiver for on-chip global interconnect. The transceiver is implemented in 65nm CMOS and achieves a data rate of up to 4Gb/s over a 10mm link with a BER of less than 10-12.","PeriodicalId":6378,"journal":{"name":"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers","volume":"32 1","pages":"262-263"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"40","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2013.6487727","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 40

Abstract

Data communication between local system blocks through on-chip global interconnects presents significant design challenges in scaled VLSI systems. The goal of this research is to reduce the energy consumed per bit transmitted, while achieving Gb/s data rates over interconnect lengths up to 10mm. Voltage-mode signaling with capacitive boosting [1-2] has been proposed for low-power on-chip interconnects. To increase the data rate over RC-limited interconnect, aggressive equalization schemes should be used in receivers [1-3] and transmitters [1-2] at the cost of significant power consumption. As an alternative to voltage-mode signaling, current-mode signaling has been considered. It was originally used for fast bitline sensing in memory [4-5] to take inherent advantage of a reduced RC time constant. However, prior work on current-mode transceivers for on-chip interconnect shows worse energy efficiency than their voltage-mode counterparts due to large static power dissipation by current-sensing circuit [6-7]. This paper presents a 95fJ/b current-mode transceiver for on-chip global interconnect. The transceiver is implemented in 65nm CMOS and achieves a data rate of up to 4Gb/s over a 10mm link with a BER of less than 10-12.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
95fJ/b电流模式收发器,用于10mm片上互连
通过片上全局互连的本地系统块之间的数据通信在规模超大规模集成电路系统中提出了重大的设计挑战。这项研究的目标是减少每比特传输的能量消耗,同时在互连长度达10mm的情况下实现Gb/s的数据速率。电容增强的电压模式信号[1-2]已被提出用于低功耗片上互连。为了提高rc限制互连的数据速率,应该在接收机[1-3]和发射机[1-2]中使用积极的均衡方案,代价是显著的功耗。作为电压模式信号的替代方案,电流模式信号已被考虑。它最初用于内存中的快速位线传感[4-5],以利用减小RC时间常数的固有优势。然而,先前对用于片上互连的电流模式收发器的研究表明,由于电流感测电路的静态功耗大,其能量效率低于电压模式收发器[6-7]。本文提出了一种95fJ/b电流模收发器,用于片上全局互连。收发器采用65nm CMOS,在10mm链路上实现高达4Gb/s的数据速率,误码率小于10-12。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A CMOS dual-switching power-supply modulator with 8% efficiency improvement for 20MHz LTE Envelope Tracking RF power amplifiers A 3.4pJ FeRAM-enabled D flip-flop in 0.13µm CMOS for nonvolatile processing in digital systems Razor-lite: A side-channel error-detection register for timing-margin recovery in 45nm SOI CMOS Self-super-cutoff power gating with state retention on a 0.3V 0.29fJ/cycle/gate 32b RISC core in 0.13µm CMOS A fully intraocular 0.0169mm2/pixel 512-channel self-calibrating epiretinal prosthesis in 65nm CMOS
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1