An S-band 3-W load-reconfigurable power amplifier with 50–76% efficiency for VSWR up to 4:1

2017 IEEE MTT-S International Microwave Symposium (IMS) Pub Date : 2017-06-01 DOI:10.1109/MWSYM.2017.8059071

Yu-Chen Wu, M. A. Khater, A. Semnani, D. Peroulis

引用次数: 4

Abstract

A load-configurable high-efficiency power amplifier (PA), co-designed with a two-pole evanescent-mode (EVA) cavity-base impedance tuner, is demonstrated in this paper. A high-Q impedance tuner is used as the output matching network of the power amplifier to properly terminate the transistor various load impedances. The presented design is experimentally validated using GaN transistor and measured at 2.5 GHz. The quality factor of the impedance tuner is extracted from measurements and found to be approximately 300. The PA with the impedance tuner reaches 76% efficiency at VSWR = 1, 63–75% at VSWR = 2, and 50–62% at VSWR = 4. The maximum output power of the PA is 35 dBm (3.16 W).

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s波段3w负载可重构功率放大器，效率50-76%，驻波比高达4:1

本文介绍了一种负载可配置的高效率功率放大器(PA)，该放大器与两极倏逝模式(EVA)腔基阻抗调谐器协同设计。采用高q阻抗调谐器作为功率放大器的输出匹配网络，以适当终止晶体管的各种负载阻抗。采用GaN晶体管进行了实验验证，测量频率为2.5 GHz。从测量中提取阻抗调谐器的质量因子，发现其约为300。带阻抗调谐器的扩音器在VSWR = 1时效率为76%，在VSWR = 2时效率为63-75%，在VSWR = 4时效率为50-62%。放大器的最大输出功率为35dbm (3.16 W)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2017 IEEE MTT-S International Microwave Symposium (IMS)

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