Processing and characterization of ferroelectric thin films in the Pb/sub 5/Ge/sub 3/O/sub 11/-PbZr/sub 0.5/Ti/sub 0.5/O/sub 3/ system

Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1994-08-07 DOI:10.1109/ISAF.1994.522404

S. M. Landin, M. J. Haun

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Abstract

This work investigates the crystallization of pure Pb/sub 5/Ge/sub 3/O/sub 11/ (PG) and composition in the Pb/sub 5/Ge/sub 3/O/sub 11/-PbZr/sub 0.5/Ti/sub 0.5/O/sub 3/ (PG-PZT) system. PG is of interest due to its low processing temperatures and possible application as pyroelectric sensors and nonvolatile ferroelectric memories. Compositions in the PG-PZT system crystallize to form multiple ferroelectric phases at relatively low temperatures, potentially offering a unique combination of ferroelectric properties and processing conditions. Ferroelectric thin films in the PG-PZT system were fabricated on (111) Pt-coated silicon substrates using sol gel processing techniques. Rapid thermal processing was utilized to investigate the time/temperature dependencies of crystallization, phase transformations and orientation of both Pb/sub 5/Ge/sub 3/O/sub 11/ and PbZr/sub 0.5/Ti/sub 0.5/O/sub 3/. Pb/sub 5/Ge/sub 3/O/sub 11/ films with a thickness of 2000 /spl Aring/ crystallized with a c-axis orientation of greater than 90% when heat treated at 700/spl deg/C for 30 seconds.

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Pb/sub 5/Ge/sub 3/O/sub 11/-PbZr/sub 0.5/Ti/sub 0.5/O/sub 3/体系中铁电薄膜的制备与表征

本文研究了纯Pb/sub - 5/Ge/sub - 3/O/sub - 11/ (PG)的结晶及其在Pb/sub - 5/Ge/sub - 3/O/sub - 11/-PbZr/sub - 0.5/Ti/sub - 0.5/O/sub - 3/ (PG- pzt)体系中的组成。由于其加工温度低，可能应用于热释电传感器和非易失性铁电存储器，因此对PG感兴趣。PG-PZT体系中的成分在相对较低的温度下结晶形成多个铁电相，可能提供铁电性能和加工条件的独特组合。采用溶胶-凝胶工艺在(111)pt包覆的硅衬底上制备了PG-PZT体系的铁电薄膜。利用快速热处理技术研究了Pb/sub 5/Ge/sub 3/O/sub 11/和PbZr/sub 0.5/Ti/sub 0.5/O/sub 3/的结晶、相变和取向的时间/温度依赖性。在700/spl℃下热处理30秒，得到了厚度为2000 /spl的Pb/sub 5/Ge/sub 3/O/sub 11/薄膜，其C轴取向大于90%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics

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