MD Simulation of Elastic Field at an Inhomogeneity in Graphene

M. Dewapriya, R. Rajapakse
{"title":"MD Simulation of Elastic Field at an Inhomogeneity in Graphene","authors":"M. Dewapriya, R. Rajapakse","doi":"10.1109/icee44586.2018.8937915","DOIUrl":null,"url":null,"abstract":"A comprehensive molecular dynamics study is conducted to investigate the elastic field at an atomic inhomogeneity in graphene in the form of a circular hole or a circular boron-nitride inclusion. In addition, the effect on the stress field due to the interaction between an inhomogeneity and a crack is investigated. The results confirm that consideration must be given to the mechanical properties of the resulting system when atomic defects and inclusions are introduced to graphene to tailor optical and electronic properties.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"12 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icee44586.2018.8937915","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

A comprehensive molecular dynamics study is conducted to investigate the elastic field at an atomic inhomogeneity in graphene in the form of a circular hole or a circular boron-nitride inclusion. In addition, the effect on the stress field due to the interaction between an inhomogeneity and a crack is investigated. The results confirm that consideration must be given to the mechanical properties of the resulting system when atomic defects and inclusions are introduced to graphene to tailor optical and electronic properties.
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石墨烯非均匀性弹性场的MD模拟
本文采用分子动力学方法研究了石墨烯中圆形孔或圆形氮化硼包合物原子不均匀状态下的弹性场。此外,还研究了非均匀性与裂纹相互作用对应力场的影响。结果证实,在石墨烯中引入原子缺陷和夹杂物时,必须考虑所得系统的机械性能,以定制光学和电子性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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