Reverse Blocking HEMTs with Stepped P-GaN Drain

Abstract

In this work, the reverse-blocking high electron mobility transistor with stepped p-type GaN drain (SPD RB-HEMT) is proposed in this paper. The reverse-blocking capability is achieved by employing a stepped p-type GaN layer connected with the drain metal. The SPD RB-HEMT shows a blocking rating over ±1800 V and on-resistance of 2.35 mΩ·cm2 in TCAD Sentaurus simulation. Meanwhile, the stepped p-type GaN drain can reduce the offset of the turn-on voltage and optimize the electric field. Compared with conventional RB-HEMTs, the proposed SPD RB-HEMT can realize improved and balanced forward and reverse blocking characteristics.