SOI Die Heat Transfer Analysis from Device to Assembly Package

S. Irving, Y. Liu, D. Connerny, T. Luk
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引用次数: 9

Abstract

The operational characteristics of silicon devices are strongly influenced by device temperature. For SOI devices power dissipation is a much more significant challenge than for non-SOI devices. As a result the thermal design of SOI devices is vital to proper product performance. To maximize the engineering understanding of SOI circuits we develop a method to examine the combined system of SOI device and the package by finite element analysis. These results are compared to results obtained from an equivalent electrical model. The use of on die structures as an aide to heat dissipation is explored
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SOI模具从器件到装配包的传热分析
硅器件的工作特性受器件温度的影响很大。对于SOI器件,功耗是比非SOI器件更重要的挑战。因此,SOI器件的热设计对适当的产品性能至关重要。为了最大限度地提高对SOI电路的工程理解,我们开发了一种通过有限元分析来检查SOI器件和封装组合系统的方法。这些结果与等效电模型的结果进行了比较。探讨了利用上模结构来辅助散热的方法
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Front Matter: Volume 12072 Front Matter: Volume 12073 Multi-Energy Domain Modeling of Microdevices: Virtual Prototyping by Predictive Simulation A Monte Carlo Investigation of Nanocrystal Memory Reliability Difficulties on the estimation of the thermal structure function from noisy thermal impedance transients
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